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HiPerFET TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t rr
IXFN 340N07
D
G
S
S
V DSS
I D25
R DS(on)
t rr
= 70 V
= 340 A
= 4 m Ω
≤ 200 ns
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
V DSS
V DGR
V GS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M Ω
Continuous
Transient
70
70
± 20
± 30
V
V
V
V
E153432
G
S
I D25
I L(RMS)
I DM
T C = 25 ° C, Chip capability
Terminal current limit
T C = 25 ° C, pulse width limited by T JM
340
100
1360
A
A
A
D
S
I AR
T C = 25 ° C
200
A
G = Gate
D = Drain
E AR
E AS
dv/dt
P D
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 Ω
T C = 25 ° C
64
4
10
700
mJ
J
V/ns
W
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
T J
T JM
T stg
V ISOL
M d
Weight
50/60 Hz, RMS t = 1 min
I ISOL ≤ 1 mA t=1s
Mounting torque
Terminal connection torque
-55 ... +150 ° C
150 ° C
-55 ... +150 ° C
2500 V~
3000 V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Features
? International standard package
? miniBLOC, with Aluminium nitride
isolation
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Low package inductance
? Fast intrinsic Rectifier
Applications
Symbol
V DSS
V GH(th)
I GSS
I DSS
Test Conditions
V GS = 0 V, I D = 3 mA
V DS = V GS , I D = 8 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
70 V
2.0 4.0 V
± 200 nA
T J = 25 ° C 100 μ A
T J = 125 ° C 2 mA
? DC-DC converters
? Battery chargers
? Switched-mode and resonant-mode
power supplies
? DC choppers
? Temperature and lighting controls
? Linear current regulators
Advantages
R DS(on)
V GS = 10 V, I D = 100A
Pulse test, t ≤ 300 μ s,
duty cycle d ≤ 2 %
4
m Ω
? Easy to mount
? Space savings
? High power density
? 2004 IXYS All rights reserved
DS98547D(05/04)
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